Fast I/O weak pullup current
參數(shù)資料
型號: MPC5534MVM80
廠商: Freescale Semiconductor
文件頁數(shù): 8/60頁
文件大?。?/td> 0K
描述: MCU 1MB FLASH 80MHZ 208MAPBGA
標(biāo)準(zhǔn)包裝: 90
系列: MPC55xx Qorivva
核心處理器: e200z6
芯體尺寸: 32-位
速度: 80MHz
連通性: CAN,EBI/EMI,以太網(wǎng),SCI,SPI
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 192
程序存儲器容量: 1MB(1M x 8)
程序存儲器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 34x12b
振蕩器型: 外部
工作溫度: -40°C ~ 125°C
封裝/外殼: 208-BGA
包裝: 托盤
其它名稱: Q4437099
T0850514
MPC5534 Microcontroller Data Sheet, Rev. 6
Electrical Characteristics
Freescale Semiconductor
16
31
Fast I/O weak pullup current 21
1.62–1.98 V
2.25–2.75 V
3.00–3.60 V
IACT_F
10
20
110
130
170
A
Fast I/O weak pulldown current 21
1.62–1.98 V
2.25–2.75 V
3.00–3.60 V
10
20
100
130
170
A
32
Slow and medium I/O weak pullup/down current 21
3.0–3.6 V
4.5–5.5 V
IACT_S
10
20
150
170
A
33
I/O input leakage current 22
IINACT_D
–2.5
2.5
A
34
DC injection current (per pin)
IIC
–2.0
2.0
mA
35
Analog input current, channel off 23
IINACT_A
–150
150
nA
35a Analog input current, shared analog / digital pins
(AN[12], AN[13], AN[14], AN[15])
IINACT_AD
–2.5
2.5
A
36
VSS to VSSA differential voltage
24
VSS – VSSA
–100
100
mV
37
Analog reference low voltage
VRL
VSSA – 0.1
VSSA + 0.1
V
38
VRL differential voltage
VRL – VSSA
–100
100
mV
39
Analog reference high voltage
VRH
VDDA – 0.1
VDDA + 0.1
V
40
VREF differential voltage
VRH – VRL
4.5
5.25
V
41
VSSSYN to VSS differential voltage
VSSSYN – VSS
–50
50
mV
42
VRCVSS to VSS differential voltage
VRCVSS – VSS
–50
50
mV
43
VDDF to VDD differential voltage
VDDF – VDD
–100
100
mV
43a VRC33 to VDDSYN differential voltage
VRC33 – VDDSYN
–0.1
0.1 25
V
44
Analog input differential signal range (with common mode 2.5 V)
VIDIFF
–2.5
2.5
V
45
Operating temperature range, ambient (packaged)
TA = (TL to TH)TL
TH
C
46
Slew rate on power-supply pins
50
V/ms
1 V
DDE2 and VDDE3 are limited to 2.25–3.6 V only if SIU_ECCR[EBTS] = 0; VDDE2 and VDDE3 have a range of 1.6–3.6 V if
SIU_ECCR[EBTS] = 1.
2 | V
DDA0 – VDDA1 | must be < 0.1 V.
3 V
PP can drop to 3.0 V during read operations.
4 If standby operation is not required, connect V
STBY to ground.
5 Applies to CLKOUT, external bus pins, and Nexus pins.
6 Maximum average RMS DC current.
7 Figure 2 shows an illustration of the I
DD_STBY values interpolated for these temperature values.
8 Average current measured on Automotive benchmark.
9 Peak currents can be higher on specialized code.
10 High use current measured while running optimized SPE assembly code with all channels of the eMIOS and eTPU running
autonomously, plus the eDMA transferring data continuously from SRAM to SRAM.
Table 9. DC Electrical Specifications (TA = TL to TH) (continued)
Spec
Characteristic
Symbol
Min
Max.
Unit
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