參數(shù)資料
型號(hào)： MPC8323VRADDC
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 56/82頁(yè)
文件大?。?/td> 0K
描述： IC MPU PWRQUICC II 516-PBGA
產(chǎn)品培訓(xùn)模塊： MPC8323E PowerQUICC II Pro Processor
標(biāo)準(zhǔn)包裝： 40
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 266MHz
電壓： 1V
安裝類型： 表面貼裝
封裝/外殼： 516-BBGA
供應(yīng)商設(shè)備封裝： 516-FPBGA（27x27）
包裝： 托盤
配用： MPC8323E-RDB-ND - BOARD REFERENCE DESIGN
MPC8323E PowerQUICC II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 4
6
Freescale Semiconductor
Electrical Characteristics
2
Electrical Characteristics
This section provides the AC and DC electrical specifications and thermal characteristics for the
MPC8323E. The MPC8323E is currently targeted to these specifications. Some of these specifications are
independent of the I/O cell, but are included for a more complete reference. These are not purely I/O buffer
design specifications.
2.1
Overall DC Electrical Characteristics
This section covers the ratings, conditions, and other characteristics.
2.1.1
Absolute Maximum Ratings
Table 1 provides the absolute maximum ratings.
Table 1. Absolute Maximum Ratings1
Characteristic
Symbol
Max Value
Unit
Notes
Core supply voltage
VDD
–0.3 to 1.26
V
—
PLL supply voltage
AVDDn
–0.3 to 1.26
V
—
DDR1 and DDR2 DRAM I/O voltage
GVDD
–0.3 to 2.75
–0.3 to 1.98
V—
PCI, local bus, DUART, system control and power management, I2C,
SPI, MII, RMII, MII management, and JTAG I/O voltage
OVDD
–0.3 to 3.6
V
—
Input voltage
DDR1/DDR2 DRAM signals
MVIN
–0.3 to (GVDD + 0.3)
V
2
DDR1/DDR2 DRAM reference
MVREF
–0.3 to (GVDD + 0.3)
V
2
Local bus, DUART, CLKIN, system
control and power management,
I2C, SPI, and JTAG signals
OVIN
–0.3 to (OVDD + 0.3)
V
3
PCI
OVIN
–0.3 to (OVDD + 0.3)
V
5
Storage temperature range
TSTG
–55 to 150
°C—
Notes:
1. Functional and tested operating conditions are given in Table 2. Absolute maximum ratings are stress ratings only, and
functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause
permanent damage to the device.
2. Caution: MVIN must not exceed GVDD by more than 0.3 V. This limit may be exceeded for a maximum of 100 ms during
power-on reset and power-down sequences.
3. Caution: OVIN must not exceed OVDD by more than 0.3 V. This limit may be exceeded for a maximum of 100 ms during
power-on reset and power-down sequences.
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