參數(shù)資料
型號: MPC8535EAVTANG
廠商: Freescale Semiconductor
文件頁數(shù): 124/126頁
文件大?。?/td> 0K
描述: MCU PWRQUICC II 800MHZ 783-PBGA
標(biāo)準(zhǔn)包裝: 1
系列: MPC85xx
處理器類型: 32-位 MPC85xx PowerQUICC III
速度: 800MHz
電壓: 1V
安裝類型: 表面貼裝
封裝/外殼: 783-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 783-FCPBGA(29x29)
包裝: 托盤
Electrical Characteristics
MPC8535E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
Freescale Semiconductor
97
2.20.2.4
AC Requirements for SerDes Reference Clocks
The clock driver selected should provide a high quality reference clock with low phase noise and cycle-to-cycle jitter. Phase
noise less than 100KHz can be tracked by the PLL and data recovery loops and is less of a problem. Phase noise above 15MHz
is filtered by the PLL. The most problematic phase noise occurs in the 1-15MHz range. The source impedance of the clock
driver should be 50 ohms to match the transmission line and reduce reflections which are a source of noise to the system.
This table describes some AC parameters common to SGMII and PCI Express protocols.
Figure 66. Differential Measurement Points for Rise and Fall Time
Table 69. SerDes Reference Clock Common AC Parameters
At recommended operating conditions with XVDD_SRDS1 or XVDD_SRDS2 = 1.0V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
Rising Edge Rate
Rise Edge Rate
1.0
4.0
V/ns
2, 3
Falling Edge Rate
Fall Edge Rate
1.0
4.0
V/ns
2, 3
Differential Input High Voltage
VIH
+200
mV
2
Differential Input Low Voltage
VIL
–200
mV
2
Rising edge rate (SDn_REF_CLK) to falling edge rate
(SDn_REF_CLK) matching
Rise-Fall
Matching
—20
%
1, 4
Notes:
1. Measurement taken from single ended waveform.
2. Measurement taken from differential waveform.
3. Measured from –200 mV to +200 mV on the differential waveform (derived from SDn_REF_CLK minus SDn_REF_CLK). The
signal must be monotonic through the measurement region for rise and fall time. The 400 mV measurement window is
centered on the differential zero crossing. See Figure 66.
4. Matching applies to rising edge rate for SDn_REF_CLK and falling edge rate for SDn_REF_CLK. It is measured using a 200
mV window centered on the median cross point where SDn_REF_CLK rising meets SDn_REF_CLK falling. The median cross
point is used to calculate the voltage thresholds the oscilloscope is to use for the edge rate calculations. The Rise Edge Rate
of SDn_REF_CLK should be compared to the Fall Edge Rate of SDn_REF_CLK, the maximum allowed difference should not
exceed 20% of the slowest edge rate. See Figure 67.
VIH = +200 mV
VIL = –200 mV
0.0 V
SD
n_REF_CLK
SD
n_REF_CLK
Fall Edge Rate
Rise Edge Rate
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