參數(shù)資料
型號: MPC8544CVTANGA
廠商: Freescale Semiconductor
文件頁數(shù): 114/117頁
文件大?。?/td> 0K
描述: IC MPU POWERQUICC III 783-FCBGA
標(biāo)準(zhǔn)包裝: 36
系列: MPC85xx
處理器類型: 32-位 MPC85xx PowerQUICC III
速度: 800MHz
電壓: 0.95 V ~ 1.05 V
安裝類型: 表面貼裝
封裝/外殼: 783-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 783-FCPBGA(29x29)
包裝: 托盤
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 6
96
Freescale Semiconductor
Thermal
19.6.2
Platform to FIFO Restrictions
Please note the following FIFO maximum speed restrictions based on platform speed. Refer to Section 4.4,
“Platform to FIFO Restrictions,for additional information.
20 Thermal
This section describes the thermal specifications of the MPC8544E.
20.1
Thermal Characteristics
Table 70 provides the package thermal characteristics.
Table 69. FIFO Maximum Speed Restrictions
Platform Speed (MHz)
Maximum FIFO Speed for Reference Clocks TSECn_TX_CLK, TSECn_RX_CLK
(MHz)1
533
126
400
94
Note:
1. FIFO speed should be less than 24% of the platform speed.
Table 70. Package Thermal Characteristics
Characteristic
JEDEC Board
Symbol
Value
Unit
Notes
Junction-to-ambient natural convection
Single layer board (1s)
RθJA
26
° C/W
1, 2
Junction-to-ambient natural convection
Four layer board (2s2p)
RθJA
21
° C/W
1, 2
Junction-to-ambient (@200 ft/min)
Single layer board (1s)
RθJA
21
° C/W
1, 2
Junction-to-ambient (@200 ft/min)
Four layer board (2s2p)
RθJA
17
° C/W
1, 2
Junction-to-board thermal
RθJB
12
° C/W
3
Junction-to-case thermal
RθJC
<0.1
° C/W
4
Notes:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal
resistance.
2. Per JEDEC JESD51-2 and JESD51-6 with the board (JESD51-9) horizontal.
3. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
4. Thermal resistance between the active surface of the die and the case top surface determined by the cold plate method (MIL
SPEC-883 Method 1012.1) with the calculated case temperature. Actual thermal resistance is less than 0.1
° C/W.
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