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參數(shù)資料
| 型號： | MPS5179 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Transistor(NPN道射頻放大器) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MPS5179 |
M
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
CEO(
sus
)
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
sat
)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 3.0 mA, I
B
= 0
I
C
= 1.0
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 15 V, I
E
= 0
V
CB
= 15 V, T
A
= 150
°
C
12
20
2.5
V
V
V
μ
A
μ
A
0.02
1.0
I
C
= 3.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
25
250
0.4
1.0
V
V
I
= 5.0 mA, V
CE
= 6.0 V,
f = 100 MHz
V
= 10 V, I
= 0,
f = 0.1 to 1.0 MHz
I
C
= 2.0 mA, V
CE
= 6.0 V,
f = 1.0 kHz
I
= 2.0 mA, V
CB
= 6.0 V,
f = 31.9 MHz
I
C
= 1.5 mA, V
CE
= 6.0 V,
R
S
= 50
, f = 200 MHz
900
2000
MHz
C
cb
Collector-Base Capacitance
1.0
pF
h
fe
Small-Signal Current Gain
25
300
rb’C
c
Collector Base Time Constant
3.0
14
ps
NF
Noise Figure
5.0
dB
FUNCTIONAL TEST
G
pe
Amplifier Power Gain
V
= 6.0 V, I
C
= 5.0 mA,
f = 200 MHz
V
CB
= 10 V, I
E
= 12 mA,
f
≥
500 MHz
15
dB
P
O
Power Output
20
mW
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
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PDF描述 |
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| MPS6515 | NPN General Purpose Amplifier |
| MPS6518 | PNP General Purpose Amplifier |
| MPS6531 | NPN General Purpose Amplifier(NPN通用放大器) |
| MPS6534 | PNP General Purpose Amplifier(PNP通用放大器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPS5179_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN RF Transistor |
| MPS5179_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Frequency Transistor NPN Silicon |
| MPS5179_D26Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPS5179_D27Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPS5179_D75Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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