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參數(shù)資料
| 型號： | MPS650 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 173K |
| 代理商： | MPS650 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
75
75
75
40
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
—
0.5
0.3
Vdc
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
Base–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
VBE(on)
VBE(sat)
—
1.0
Vdc
—
1.2
Vdc
fT
75
—
MHz
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. MPS650, MPS651
Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
h
300
270
0
VCE = 2.0 V
TJ = 125
°
C
25
°
C
–55
°
C
NPN
IC, 0
–10
–20
–50
–10
–200
–500
h
250
225
0
PNP
30
60
90
120
150
180
210
240
20
50
100
200
500
1.0 A
2.0 A 4.0 A
25
50
75
100
125
200
175
150
–1.0 A –2.0 A–4.0 A
VCE = –2.0 V
TJ = 125
°
C
25
°
C
–55
°
C
IC, COLLECTOR CURRENT (mA)
50
V
2.0
0
IC, C0
V
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0
Figure 2. MPS750, MPS751
Typical DC Current Gain
Figure 3. MPS650, MPS651
On Voltages
Figure 4. MPS750, MPS751
On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100
200
500
1.0 A
2.0 A
4.0 A
–50
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.4
–0.8
–0.6
–0.2
–10
0
–20
–50
0
–1.0 A
–2.0 A
–4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
NPN
PNP
VBE(on) @ VCE = 2.0 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MPS650_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS6507 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 20V 0.05A 3-Pin TO-226 |
| MPS650G | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS650G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor Transistor Polarity:S |
| MPS650RLRA | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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