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參數(shù)資料
| 型號(hào)： | MPS650 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 173K |
| 代理商： | MPS650 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. MPS650, MPS651
Collector Saturation Region
IB, BASE CURRENT (mA)
0.05
1.0
0
NPN
IB, BASE CURRENT (mA)
PNP
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 6. MPS750, MPS751
Collector Saturation Region
V
V
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50
100 200 500
TJ = 25
°
C
TJ = 25
°
C
IC = 10 mA IC = 100 mA
IC = 500 mA
IC = 2.0 A
IC = –10 mA
IC = –100 mA
IC = –500 mA
IC = –2.0 A
–0.0
5
–1.0
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100–200 –500
10
4.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
I
1.0
2.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
10
20
50
100
Figure 7. MPS650, MPS651 SOA,
Safe Operating Area
TA = 25
°
C
1.0 ms
TC = 25
°
C
100
μ
s
–10
–4.0
–2.0
–1.0
–0.5
–0.2
–0.1
–0.02
–0.01
–1.0
–2.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–5.0
–10
–20
–50
–100
100
μ
s
1.0 ms
TA = 25
°
C
TC = 25
°
C
MPS65
0
MPS65
1
MPS75
M0
1
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–0.05
Figure 8. MPS750, MPS751 SOA,
Safe Operating Area
NPN
PNP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPS651 | Amplifier Transistors |
| MPS750 | Amplifier Transistors |
| MPS651 | EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
| MPS6521 | Amplifier Transistors |
| MPS6521 | NPN (AMPLIFIER TRANSISTOR) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS650_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS6507 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 20V 0.05A 3-Pin TO-226 |
| MPS650G | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS650G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor Transistor Polarity:S |
| MPS650RLRA | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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