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參數(shù)資料
| 型號： | MPS651 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 173K |
| 代理商： | MPS651 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
75
75
75
40
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
—
0.5
0.3
Vdc
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
Base–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
VBE(on)
VBE(sat)
—
1.0
Vdc
—
1.2
Vdc
fT
75
—
MHz
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. MPS650, MPS651
Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
h
300
270
0
VCE = 2.0 V
TJ = 125
°
C
25
°
C
–55
°
C
NPN
IC, 0
–10
–20
–50
–10
–200
–500
h
250
225
0
PNP
30
60
90
120
150
180
210
240
20
50
100
200
500
1.0 A
2.0 A 4.0 A
25
50
75
100
125
200
175
150
–1.0 A –2.0 A–4.0 A
VCE = –2.0 V
TJ = 125
°
C
25
°
C
–55
°
C
IC, COLLECTOR CURRENT (mA)
50
V
2.0
0
IC, C0
V
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0
Figure 2. MPS750, MPS751
Typical DC Current Gain
Figure 3. MPS650, MPS651
On Voltages
Figure 4. MPS750, MPS751
On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100
200
500
1.0 A
2.0 A
4.0 A
–50
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.4
–0.8
–0.6
–0.2
–10
0
–20
–50
0
–1.0 A
–2.0 A
–4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
NPN
PNP
VBE(on) @ VCE = 2.0 V
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PDF描述 |
|---|---|
| MPS750 | Amplifier Transistors |
| MPS650 | Amplifier Transistors |
| MPS651 | Amplifier Transistors |
| MPS750 | Amplifier Transistors |
| MPS651 | EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS651_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651_Q | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6511 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-92 |
| MPS6512 | 制造商:Motorola Inc 功能描述: |
| MPS-65-12 | 功能描述:線性和開關(guān)式電源 62.4W 12V 5.2A RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風格:Rack 長度: 寬度: 高度: |
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