參數(shù)資料
型號： MPS651RLRE
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁數(shù)： 12/34頁
文件大?。?/td> 342K
代理商： MPS651RLRE
NPN MPS650 MPS651 PNP MPS750 MPS751
2–530
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
75
40
—
Collector – Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
0.5
0.3
Vdc
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
—
1.0
Vdc
Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VBE(sat)
—
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
75
—
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. MPS650, MPS651
Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
h
FE
,D
C
U
RRENT
G
AIN
300
0
VCE = 2.0 V
TJ = 125°C
25
°C
–55
°C
NPN
IC, COLLECTOR CURRENT (mA)
–10
– 20
– 50
–10
0
– 200
– 500
h
FE
,DC
CURRENT
GAIN
250
0
PNP
30
60
90
120
150
180
210
240
270
20
50
100
200
500 1.0 A 2.0 A 4.0 A
25
50
75
100
125
200
175
150
225
–1.0 A –2.0 A –4.0 A
VCE = –2.0 V
TJ = 125°C
25
°C
–55
°C
IC, COLLECTOR CURRENT (mA)
50
V
,V
OL
TA
G
E
(V
OL
TS)
2.0
0
IC, COLLECTOR CURRENT (mA)
V
,VOL
TAGE
(VOL
TS)
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0
Figure 2. MPS750, MPS751
Typical DC Current Gain
Figure 3. MPS650, MPS651
On Voltages
Figure 4. MPS750, MPS751
On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100
200
500
1.0 A
2.0 A
4.0 A
–50
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.4
–0.8
–0.6
–0.2
–10
0
–20
0
–50
0
–1.0 A
–2.0 A
–4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
NPN
PNP
VBE(on) @ VCE = 2.0 V
相關(guān)PDF資料
PDF描述
MPS651RL1 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS750RL1 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS751RLRE 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS650RLRM 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS750RLRM 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS651RLRM 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS651RLRMG 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS651S 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPS6520 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6520 LEADFREE 功能描述:兩極晶體管 - BJT NPN Gen Pur SS sistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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