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參數(shù)資料
| 型號(hào)： | MPS6521RL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 480K |
| 代理商： | MPS6521RL1 |
NPN MPS6521 PNP MPS6523
http://onsemi.com
836
PNP
MPS6523
Figure 39. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZqJA(t) = r(t) w RqJA
TJ(pk) – TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 40
Figure 41.
TJ, JUNCTION TEMPERATURE (°C)
104
-40
I C
,COLLECT
OR
CURRENT
(nA)
Figure 42.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
I C
,COLLECT
OR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 40. Using the model and the de-
vice thermal response the normalized effective transient ther-
mal resistance of Figure 39 was calculated for various duty
cycles.
To find ZθJA(t), multiply the value obtained from Figure 39
by the steady state value RθJA.
Example:
The MPS6523 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 39 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
The safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 42 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 39. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10-2
10-1
100
101
102
103
-20
0
+20 +40 +60 +80 +100 +120 +140 +160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 s
TC = 25°C
1.0 s
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0 8.0 10
20
40
TJ = 150°C
100 s
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| MPS6522 | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MPS6523_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
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