參數(shù)資料
型號： MPS6523
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： PNP (AMPLIFIER TRANSISTOR)
中文描述： 進步黨（放大器晶體管）
文件頁數(shù)： 11/12頁
文件大小： 791K
代理商： MPS6523
11
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP
MPS6523
TYPICAL DYNAMIC CHARACTERISTICS
Figure 37. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
r
(
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θ
JA(t) = r(t)
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
t1
t2
P(pk)
FIGURE 19
Figure 38. Active–Region Safe Operating Area
TJ, JUNCTION TEMPERATURE (
°
C)
104
–4
0
I
Figure 39. Typical Collector Leakage Current
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
I
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find Z
θ
JA(t), multiply the value obtained from Figure 17 by the
steady state value R
θ
JA.
Example:
The MPS3905 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x R
θ
JA = 0.22 x 2.0 x 200 = 88
°
C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150
°
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
≤
150
°
C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–2
0
0
+20
+40
+60
+80
+100 +120 +140 +160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10
μ
s
TC = 25
°
C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0
10
20
40
TJ = 150
°
C
100
μ
s
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