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參數(shù)資料
| 型號： | MPS751 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 25K |
| 代理商： | MPS751 |
2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
M
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
I
C
Collector Current (DC)
P
C
Collector Dissipation (T
a
=25
°
C) (Note 2, 3)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Voltage
BV
CEO
Collector-Emitter Voltage
BV
EBO
Emitter-Base Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Parameter
Value
-60
2
625
150
- 55 ~ 150
Units
V
A
mW
°
C
°
C
Test Condition
I
C
= 100
μ
A
I
C
= 10mA
I
E
= 10
μ
A
V
CB
= 30V
V
EB
= 3V
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
I
C
= 2A, I
B
= 200mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 50mA
f = 100MHz
Min.
-80
-60
-5
Typ.
Max.
Units
V
V
V
nA
nA
100
100
75
75
75
40
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.5
0.3
1.2
1
V
V
BE
(sat)
V
BE
(on)
f
T
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
V
V
75
MHz
MPS751
Silicon PNP Transistor
(Note 1)
Low Saturation Voltage
1. Emitter 2. Base 3. Collector
TO-92
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS751_D26Z | 功能描述:兩極晶體管 - BJT Sil PNP Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS751_Q | 功能描述:兩極晶體管 - BJT Si PNP Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS75110 WAF | 制造商:Texas Instruments 功能描述: |
| MPS75118 WAF | 制造商:Texas Instruments 功能描述: |
| MPS75119 WAF | 制造商:Texas Instruments 功能描述: |
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