參數(shù)資料
型號： MPS8050S
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
中文描述： 外延平面NPN晶體管（高電流）
文件頁數(shù)： 1/2頁
文件大?。?/td> 391K
代理商： MPS8050S
2003. 3. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25
)
DIM
A
MILLIMETERS
2.93 0.20
+
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
B
C
D
E
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=1V, I
C
=5mA
45
135
-
h
FE
(2) (Note)
V
CE
=1V, I
C
=100mA
85
160
300
h
FE
(3)
V
CE
=1V, I
C
=800mA
40
110
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=800mA, I
B
=80mA
-
0.28
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=800mA, I
B
=80mA
-
0.98
1.2
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
-
0.66
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
100
190
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
9
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
1.5
A
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Note : h
FE
(2) Classification B:85
160 , C : 120
200 , D : 160
300
* P
C
: Package Mounted On 99.5% Alumina (10
8
0.6
)
h Rank
Type Name
Marking
Lot No.
BH
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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