參數資料
型號: MPS8098
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Amplifier Transistors
中文描述: 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁數: 2/2頁
文件大?。?/td> 23K
代理商: MPS8098
M
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CEO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 60 V, I
B
= 0
V
EB
= 6.0 V, I
C
= 0
60
60
6.0
V
V
V
μ
A
μ
A
μ
A
0.1
0.1
0.1
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 100 mA
I
C
= 100 mA, I
B
= 5.0 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 5.0 V, I
C
= 1.0 mA
100
100
75
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.4
0.3
0.7
V
V
V
V
BE(
on
)
Base-Emitter On Voltage
0.5
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
C
ib
Input Capacitance
f
T
Current Gain - Bandwidth Product
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
6.0
25
pF
pF
MHz
150
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
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