參數(shù)資料
型號(hào): MPS8099
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: NPN (AMPLIFIER TRANSISTOR)
中文描述: npn型(放大器晶體管)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 248K
代理商: MPS8099
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
hFE
100
100
75
300
VCE(sat)
0.4
0.3
Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
MPS8098, MPS8598
MPS8099, MPS8599
VBE(on)
0.5
0.6
0.7
0.8
Vdc
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
150
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cobo
6.0
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cibo
25
30
pF
1. Pulse Test: Pulse Width
300 s, Duty Cycle = 2.0%.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN–ON TIME
–1.0 V
VCC
+40 V
RL
* CS
6.0 pF
RB
100
100
Vin
5.0 F
tr = 3.0 ns
0
+10 V
5.0 s
OUTPUT
TURN–OFF TIME
+VBB
VCC
+40 V
RL
* CS
6.0 pF
RB
100
100
Vin
5.0 F
tr = 3.0 ns
5.0 s
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
相關(guān)PDF資料
PDF描述
MPS8598 PNP (AMPLIFIER TRANSISTOR)
MPS8599 PNP (AMPLIFIER TRANSISTOR)
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