參數(shù)資料
型號(hào): MPS8099RLRM
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Amplifier Transistors Voltage and Current are Negative for PNP Transistors
中文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 90K
代理商: MPS8099RLRM
(NPN) MPS8098, MPS8099*, (PNP) MPS8598, MPS8599*
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
MPS8098, MPS8598
MPS8099, MPS8599
V
(BR)CEO
60
80
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
MPS8098, MPS8598
MPS8099, MPS8599
V
(BR)CBO
60
80
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
MPS8098, MPS8099
MPS8598, MPS8599
V
(BR)EBO
6.0
5.0
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
0.1
Adc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MPS8098, MPS8598
MPS8099, MPS8599
I
CBO
0.1
0.1
Adc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
MPS8098, MPS8099
MPS8598, MPS8599
I
EBO
0.1
0.1
Adc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
100
100
75
300
CollectorEmitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.4
0.3
Vdc
BaseEmitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MPS8098, MPS8598
MPS8099, MPS8599
V
BE(on)
0.5
0.6
0.7
0.8
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
150
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
C
obo
6.0
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
C
ibo
25
30
pF
2. Pulse Test: Pulse Width
300 s, Duty Cycle = 2.0%.
Figure 1. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r
T
Z
JC
(t) = r(t)
R
JC
T
J(pk)
T
C
= P
(pk)
Z
JC
(t)
Z
JA
(t) = r(t)
R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
SINGLE PULSE
相關(guān)PDF資料
PDF描述
MPS8099RLRMG Amplifier Transistors Voltage and Current are Negative for PNP Transistors
MPS8099RLRP Amplifier Transistors Voltage and Current are Negative for PNP Transistors
MPS8099RLRPG Amplifier Transistors Voltage and Current are Negative for PNP Transistors
MPS8598G Amplifier Transistors Voltage and Current are Negative for PNP Transistors
MPS8598RLRA Amplifier Transistors Voltage and Current are Negative for PNP Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS8099RLRMG 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS8099RLRP 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS8099RLRPG 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS80WGW 功能描述:磁性/簧片開關(guān) PROX SENSOR 2-PIN RoHS:否 制造商:MEDER electronic (Standex) 開關(guān)類型:Reed 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)額定值:10 VA 操作范圍:10 At to 50 At 工作間隙: 磁鐵類型: 顏色: 端接類型:Axial 封裝:Bulk
MPS830 制造商:BOWEI 制造商全稱:BOWEI 功能描述:Fixecd PLL synthesizer