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參數(shù)資料
| 型號(hào)： | MPS8550 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP通用放大器) |
| 中文描述： | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | MPS8550 |
M
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
CES
Colector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 30 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 35 V, I
E
= 0
V
CE
= 20 V, I
E
= 0
25
40
6.0
V
V
V
μ
A
nA
0.1
75
I
C
= 5.0 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 800 mA, V
CE
= 1.0 V
I
C
= 800 mA, I
B
= 80 mA
I
C
= 800 mA, I
B
= 80 mA
45
85
40
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.5
1.2
V
V
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 60
10
100
1000
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40 oC
125 °C
25 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
B
β
= 10
- 40 oC
125 °C
25 °C
Typical Pulsed Current Gain
vs Collector Current
1
10
100
1000
100
200
300
400
500
600
I - COLLECTOR CURRENT (A)
h
F
- 40 oC
V = 1V
125 °C
25 °C
Base Emitter ON Voltage vs
Collector Current
P 60
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
V = 1V
- 40 oC
125 °C
25 °C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS8550_10 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| MPS8550S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| MPS8598 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
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