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參數(shù)資料
| 型號： | MPSH11 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF/UHF Transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MPSH11 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
25
Vdc
Collector–Base Voltage
30
Vdc
Emitter–Base Voltage
3.0
Vdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.0
8.0
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
357
°
C/W
Thermal Resistance, Junction to Case
125
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
25
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
30
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
3.0
—
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
—
100
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSH10/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
1
23
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSH11 | VHF/UHF Transistors(NPN Silicon) |
| MPSH11 | NPN RF Transistor |
| MPSH17 | CATV Transistor |
| MPSH17 | CATV Transistor(NPN Silicon) |
| MPSH24 | VHF Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSH-11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN RF Transistor |
| MPSH11_D27Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPSH11_Q | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSH16-D20-120V | 制造商:Black Box Corporation 功能描述:Outlet-Managed PDU, 16-Outlet, Dual-Circuit, 120 VAC, 20-Amp |
| MPSH16-D20-120VT | 制造商:Black Box Corporation 功能描述:16 OUTLET 120V 20A DUAL CIRCUIT OUTLET METERING |
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