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參數(shù)資料
| 型號： | MRF19060SR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 387K |
| 代理商： | MRF19060SR3 |
1
MRF19060 MRF19060R3 MRF19060SR3
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
≥
= 25
°
C
Derate above 25
°
C
P
D
180
1.03
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.97
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19060/D
SEMICONDUCTOR TECHNICAL DATA
1990 MHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF19060R3
CASE 465A–06, STYLE 1
NI–780S
MRF19060SR3
REV 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF19060 | RF MOSFET(射頻MOS場效應(yīng)管) |
| MRF19060S | RF MOSFET(射頻MOS場效應(yīng)管) |
| MRF19085LSR3 | RF Power Field Effect Transistors |
| MRF19085 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085LR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19085 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
| MRF19085LR3 | 功能描述:IC MOSFET RF N-CHAN NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085LR5 | 功能描述:IC MOSFET RF N-CHAN NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085LSR3 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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