參數(shù)資料
型號： MRF21030LR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power Field Effect Transistors
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-400, CASE 465E-04, 2 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 377K
代理商： MRF21030LR3
MRF21030R3 MRF21030SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μ
A)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 250 mA)
V
GS(Q)
2
3.3
4.5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
g
fs
—
2
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
—
98.5
—
pF
Output Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
—
37
—
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
1.3
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
G
ps
—
13
—
dB
Two–Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
–30
—
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
–13
—
dB
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
G
ps
12
13
—
dB
Two–Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
–30
–27.5
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
–13
–9
dB
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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