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參數(shù)資料
| 型號： | MRF2628 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 244-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 112K |
| 代理商： | MRF2628 |
1
MRF2628
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and
industrial FM equipment.
Compact .280 Stud Package
Specified 12.5 V, 175 MHz Performance
Output Power = 15 Watts
Power Gain = 12 dB Min
Efficiency = 60% Min
Characterized to 220 MHz
Load Mismatch Capability at High Line and Overdrive
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
18
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
2.5
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
40
0.23
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
18
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
—
1.0
mAdc
(continued)
Order this document
by MRF2628/D
SEMICONDUCTOR TECHNICAL DATA
15 W
136–220 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
REV 6
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| MRF281 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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