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參數(shù)資料
| 型號： | MRF372D |
| 廠商： | Motorola, Inc. |
| 英文描述： | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 射頻MOSFET線的射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 541K |
| 代理商： | MRF372D |
MRF372
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μ
A)
V
(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
V
GS(Q)
2.5
3.5
4.5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
—
0.28
0.45
Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A)
g
fs
—
2.6
—
S
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
iss
—
260
—
pF
Output Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
oss
—
69
—
pF
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
C
rss
—
2.5
—
pF
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION
(In Motorola MRF372 Narrowband Circuit, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 180 W PEP, I
DQ
= 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
G
ps
16
17
—
dB
Drain Efficiency
(V
DD
= 32 V, P
out
= 180 W PEP, I
DQ
= 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–35
–31
dBc
Output Mismatch Stress
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz, V
SWR
= 3:1 at all phase angles
of test)
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS, BROADBAND OPERATION
(In Motorola MRF372 Broadband Circuit, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
G
ps
—
14.5
—
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–31
—
dBc
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
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PDF描述 |
|---|---|
| MRF372 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
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| MRF373ALR1 | RF Power Field Effect Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF372R3 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF372R5 | 功能描述:射頻MOSFET電源晶體管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373AL | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 70V 3-PIN NI-360 - Bulk |
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