參數(shù)資料
型號(hào): MRF373SR1
廠商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: RF POWER FIELD EFFECT TRANSISTORS
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360S, CASE 360C-05, 3 PIN
文件頁(yè)數(shù): 2/12頁(yè)
文件大小: 804K
代理商: MRF373SR1
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
μ
A)
V
(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
V
GS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
0.6
0.8
Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A)
g
fs
2.2
2.9
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
iss
79
pF
Output Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
oss
46
pF
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
rss
4
pF
FUNCTIONAL CHARACTERISTICS,
CW Operation
Common Source Power Gain
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
G
ps
13
14.7
dB
Drain Efficiency
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
η
50
54
%
Load Mismatch
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS,
2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
G
ps
11.2
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
40
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
–30
dBc
ARCHIV ED BY FREES CALE S EMICONDUCT OR, INC. 2005
Archived 2005
A
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