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參數(shù)資料
| 型號： | MRF374 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-650, CASE 375F-03, 5 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 250K |
| 代理商： | MRF374 |
MRF374
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (per Side)
(VGS = 0 V, ID =1
μ
A per Side)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current (per Side)
(VDS = 28 V, VGS = 0 V)
IDSS
–
–
1
μ
Adc
Gate–Source Leakage Current (per Side)
(VGS = 20 V, VDS = 0 V)
IGSS
–
–
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (per Side)
(VDS = 10 V, ID = 200
μ
A per Side)
VGS(th)
2
3.5
4
Vdc
Gate Quiescent Voltage (per Side)
(VDS = 28 V, ID = 100 mA per Side)
VGS(Q)
3
4.2
5
Vdc
Drain–Source On–Voltage (per Side)
(VGS = 10 V, ID = 3 A per Side)
VDS(on)
–
0.56
0.8
Vdc
Forward Transconductance (per Side)
(VDS = 10 V, ID = 3 A per Side)
DYNAMIC CHARACTERISTICS (1)
gfs
2.2
2.8
–
S
Input Capacitance (per Side)
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
80
–
pF
Output Capacitance (per Side)
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
45
–
pF
Reverse Transfer Capacitance (per Side)
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS, TWO–TONE TESTING (2)
Crss
–
3.5
–
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
12.5
13.5
–
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
30
36
–
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
–28
–31
–
dB
Load Mismatch
(VDD = 28 Vdc, Pout = 100 W CW, IDQ = 400 mA,
f = 860 MHz, VSWR 5:1 at All Phase Angles of Test)
No Degradation in Output Power
TYPICAL TWO–TONE BROADBAND
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
–
12
–
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
–
36
–
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
–
– 34
–
dB
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF374A | 功能描述:射頻MOSFET電源晶體管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF374A_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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