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參數(shù)資料
| 型號： | MRF4427 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MRF4427 |
1
MRF4427R2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for amplifier, frequency multiplier, or oscillator applications in
industrial equipment constructed with surface mount components. Suitable for
use as output driver or pre–driver stages in VHF and UHF equipment.
Low Cost SORF Plastic Surface Mount Package
Guaranteed RF Specification — |S21|2
S–Parameter Characterization
Low Voltage Version of MRF3866
Tape and Reel Packaging Available.
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
20
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
2.0
Vdc
Collector Current — Continuous
400
mAdc
Total Device Dissipation @ TC = 75
°
C
Derate above 75
°
C
1.67
22.2
Watts
mW/
°
C
Operating Junction and Storage Temperature Range
TJ, Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
45
°
C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Emitter–Base Breakdown Voltage (IE = 100
μ
Adc)
Collector Cutoff Current (VCE = 12 Vdc, IB = 0)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
V(BR)CEO
20
—
—
Vdc
V(BR)CER
40
—
—
Vdc
V(BR)EBO
ICEO
2.0
—
—
Vdc
—
—
20
μ
Adc
(continued)
Order this document
by MRF4427/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 175 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF
(SO–8)
REV 8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF4427R1 | Inductor; Inductor Type:Power; Inductance:10uH; Inductance Tolerance:+/- 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:2.89A; Current, lt rms Series:1.45A RoHS Compliant: Yes |
| MRF4427R2 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF4427 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF448 | RF POWER TRANSISTOR NPN SILICON |
| MRF453 | RF POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF4427G | 制造商:Microsemi Corporation 功能描述:MRF4427G - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF4427GR1 | 制造商:Microsemi Corporation 功能描述:MRF4427GR1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:General purpose Small Signal |
| MRF4427GR2 | 制造商:Microsemi Corporation 功能描述:MRF4427GR2 - Bulk |
| MRF4427R1 | 制造商:Microsemi Corporation 功能描述:MRF4427R1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF4427R2 | 制造商:Microsemi Corporation 功能描述:MRF4427R2 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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