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參數(shù)資料
| 型號： | MRF464 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | MRF464 |
1
MRF464
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz, in single sideband mobile, marine and base station equipment.
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 80 W (PEP)
Minimum Gain = 15 dB
Efficiency = 40%
Intermodulation Distortion = –32 dB (Max)
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the
cap. Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
35
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
10
Adc
250
1.4
Watts
W/
°
C
°
C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
–65 to +150
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
—
0.7
°
C/W
In. Lb.
Stud Torque (1)
8.5
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0, TC = +55
°
C)
ON CHARACTERISTICS
V(BR)CEO
35
—
Vdc
V(BR)CES
65
—
Vdc
V(BR)EBO
4.0
—
Vdc
ICES
—
10
mAdc
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
NOTE:
1. Case 145A–10 — For Repeated Assembly Use 11 In. Lb.
hFE
10
—
—
(continued)
Order this document
by MRF464/D
SEMICONDUCTOR TECHNICAL DATA
80 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
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相關(guān)代理商/技術(shù)參數(shù) |
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| MRF476 | 制造商:Freescale Semiconductor 功能描述:SUB ONLY MOTOROLA SEMICONDUCTO |
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