- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371145 > MRF5S19090LR3 (MOTOROLA INC) 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF5S19090LR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 420K |
| 代理商： | MRF5S19090LR3 |
A
A
F
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
5
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
6
1860
16
60
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
Gp
,
η
I
50
10
20
30
40
I
I
V
DD
= 28 Vdc, P
out
= 18 W (Avg.), I
DQ
= 850 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
14
30
12
20
10
20
8
40
1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
0
E
100
12
17
1
1100 mA
I
DQ
= 1300 mA
850 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
450 mA
10
16
15
14
13
100
55
15
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
I
I
1100 mA
1300 mA
850 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
I
DQ
= 450 mA
10
20
25
30
35
40
45
50
10
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
TwoTone Measurements, Center Frequency = 1960 MHz
30
35
40
45
50
1
5th Order
3rd Order
42
45
56
31
P3dB = 51.21 dBm (132.13 W)
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
41
P1dB = 50.82 dBm (120.78 W)
Ideal
Actual
55
54
53
52
51
50
49
48
47
46
32
33
34
35
36
37
38
39
40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S19090LSR3 | 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130R3 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130S | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。