參數(shù)資料
型號(hào)： MRF5S19150SR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power Field Effect Transistors
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 2 PIN
文件頁(yè)數(shù)： 1/12頁(yè)
文件大小： 617K
代理商： MRF5S19150SR3
1
MRF5S19150R3 MRF5S19150SR3
Motorola, Inc. 2004
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2-Carrier N-CDMA Performance for V
DD
= 28 Volts,
P
out
= 32 Watts, I
DQ
= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — -50 dB
IM3 — -36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
Excellent Thermal Stability
Qualified Up to a Maximum of 32 V Operation
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
357
2
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
CW Operation
CW
100
Watts
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 100 W CW
Case Temperature 80
°
C, 32 W CW
R
θ
JC
0.49
0.53
°
C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S19150/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S19150R3
MRF5S19150SR3
1990 MHz, 32 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF5S19150SR3
CASE 465B-03, STYLE 1
NI-880
MRF5S19150R3
REV 1
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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