參數(shù)資料
型號(hào)： MRF5S21150S
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER FIELD EFFECT TRANSISTORS
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 556K
代理商： MRF5S21150S
MRF5S21150R3 MRF5S21150SR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
μ
Adc)
V
GS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
V
GS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
V
DS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
g
fs
—
9
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
G
ps
11
12.5
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
23
25
—
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
-37
-35
dBc
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.)
ACPR
—
-39
-37
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
-12
-9
dB
(1) Part is internally matched both on input and output.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S21150SR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF5S4125NBR1 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S4125NR1 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S4140HR3 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S4140HR5 功能描述:射頻MOSFET電源晶體管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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