參數(shù)資料
型號(hào): MRF644
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTOR NPN SILICON
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 99K
代理商: MRF644
MRF644
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
40
70
100
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
60
85
pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 25 W, IC (MAX) = 3.6 Adc, f = 470 MHz)
Input Power
(VCC = 12.5 Vdc, Pout = 25 W, f = 470 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 25 W, IC (MAX) = 3.6 Adc, f = 470 MHz)
Output Mismatch Stress
(VCC = 16 Vdc, Pin = Note 1, f = 470 MHz,
VSWR = 20:1, All Phase Angles)
Gpe
6.2
7.0
dB
Pin
5.0
6.0
Watts
η
55
60
%
ψ
*
No Degradation in Output Power
Series Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 25 W, f = 470 MHz)
Series Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 25 W, f = 470 MHz)
NOTE:
1. Pin = 150% of Drive Requirement for 25 W Output at 12.5 Vdc.
*
ψ
= Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress
test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.
Zin
1.2 + j3.3
Ohms
ZOL
1.9 + j2.1
Ohms
Figure 1. Test Circuit Schematic
C1, C2, C7, C8 — 1.0–20 pF Johanson Variable
C3 — 27 pF 100 mil ATC
C4 — 30 pF 100 mil ATC
C5, C6 — 33 pF 100 mil ATC
C9 — 250 pF 100 mil ATC
C10 — 100 pF UNELCO
C11, C14 — 1.0
μ
F 35 V TANTALUM
C12, C13 — 680 pF Feedthrough
L1 — 5
#22 AWG 0.100
ID
L2 — 5
#20 AWG 0.187
ID
RFC1 — Ferroxcube VK200–20–4B
B — Ferroxcube Bead 56–590–65–3B
Z1 — 0.25
x 0.20
Microstrip
Z2 — 1.63
x 0.20
Microstrip
Z3 — 0.20
x 0.20
Microstrip
Z4, Z5 — 1/2
#18 AWG bent in a
Z4, Z5 —
“V” shape 1/8
Wide
Z6 — 0.20
x 0.20
Microstrip
Z7 — 0.70
x 0.20
Microstrip
Z8 — 0.33
x 0.20
Microstrip
Z9 — 0.50
x 0.20
Microstrip
Board — 62.5 mil Glass Teflon,
ε
r = 2.55
RFC1
B
C1
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C2
C3
C5
C7
C8
C9
C4
C6
L1
C11
C12 C13
C14
B
L2
SOCKET
D.U.T.
相關(guān)PDF資料
PDF描述
MRF650 RF POWER TRANSISTOR NPN SILICON
MRF6522-70R3 RF MOSFETS(RF MOS場(chǎng)效應(yīng)管)
MRF652 RF POWER TRANSISTORS NPN SILICON
MRF652S RF POWER TRANSISTORS NPN SILICON
MRF653 RF POWER TRANSISTOR NPN SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF646 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF648 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF650 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF652 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF6522-70 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor