參數(shù)資料
型號: MRF652S
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTORS NPN SILICON
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CASE 249-06, 4 PIN
文件頁數(shù): 2/4頁
文件大小: 111K
代理商: MRF652S
MRF652 MRF652S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
9.5
15
pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 5.0 W)
f = 512 MHz
f = 870 MHz
Gpe
10
11
6.0
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 5.0 W, f = 512 MHz)
η
60
65
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 500 mW, f = 512 MHz,
VSWR = 30:1, At All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. 440–512 MHz Broadband Test Circuit
B1, B2, B3 — Ferrite Bead
C1 — 7.0 pF Unelco Mica
C2 — 1.0–6.0 pF Johanson Variable 5201
C3 — 15 pF Unelco Mica
C4 — 43 pF Mini–Underwood Mica
C5 — 56 pF Mini–Underwood Mica
C6 — 1000 pF Unelco Mica
C7 — 0.1
μ
F Ceramic
C8 — 68 pF Mini–Underwood Mica
C9 — 1.0
μ
F Electrolytic 25 V
C10, C11 — 5.0 pF Unelco Mica
C12 — 1.0–10 pF Johanson Variable 5501
L1, L2 — 6 Turns, 20 AWG Wire 0.125
ID
Z1, Z2 — 25 Ohm
μ
Stripline
Z3, Z4, Z5 — 50 Ohm
μ
Stripline
Board — 0.032
Glass–Teflon
D.U.T.
C4
C6
C7
C9
+
GRD
Z5
Z4
Z3
Z2
Z1
C8
C1
C2
C3
C5
C10
C11
C12
L1
B1
L2
B3
B2
+12.5 Vdc
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