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參數(shù)資料
| 型號： | MRF6V4300NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB, 4 PIN |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 816K |
| 代理商： | MRF6V4300NBR1 |
14
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2008
Initial Release of Data Sheet
1
Oct. 2008
Added Fig. 13, MTTF versus Junction Temperature, p. 6
2
Mar. 2009
Corrected Zsource, “0.40 + j5.93” to “0.39 + j1.26” and Zload, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series
Equivalent Source and Load Impedance data table and replotted data, p. 7
3
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V4300NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4 |
| MRF6V4300NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V4300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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