- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF6VP121KHR6 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6VP121KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 1167K |
| 代理商： | MRF6VP121KHR6 |
MRF6VP121KHR6 MRF6VP121KHSR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
1
0
100
17
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
16
1000
10000
25_C
TC =--30_C
85_C
20
18
Gps
19
20
21
10
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
22
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature --
128 μsec, 10% Duty Cycle
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 1000 W Peak, Pulse Width = 128 μsec,
Duty Cycle = 10%, and ηD = 56%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
105
108
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature --
Mode--S
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 1000 W Peak, Mode--S Pulse Train,
Pulse Width = 32 μsec, Duty Cycle = 6.4%, and ηD = 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
105
108
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6VP121KHSR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP21KHR6 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP2600HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。