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參數(shù)資料
| 型號： | MRF6VP2600HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 1438K |
| 代理商： | MRF6VP2600HR6 |
MRF6VP2600HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
VDD =50 Vdc,IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
1
100
110
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
100
26.5
10
0
80
100
25.5
24.5
23.5
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
25
24
22.5
1000
20
52
64
27
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
26
58
31
32
33
34
35
36
37
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 59.7 dBm (938 W)
Actual
Ideal
P2dB = 59.1 dBm (827 W)
21
26
0
25
24
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
23
600
700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
21
28
10
25
27
26
100
1000
VDD =50 Vdc,IDQ = 2600 mA, f = 225 MHz
Pulse Width = 12 μsec, Duty Cycle = 1%
VDD =50 Vdc
IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
56
54
29
30
28
P1dB = 53.3 dBm (670 W)
22
200
300
400
500
VDD =30 V
35 V
40 V
45 V
50 V
ηD
25_C
TC =--30_C
85_C
Gps
22
24
23
VDD =50 Vdc,IDQ = 2600 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
TC =25_C
TJ = 150_C
TJ = 175_C
10
80
50
70
60
20
40
30
η
D
,DRA
IN
EF
FI
CIE
NCY
(%
)
23
10
Note: Each side of device measured separately.
TJ = 200_C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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