參數(shù)資料
型號: MRF7S19120NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁數(shù): 5/14頁
文件大?。?/td> 512K
代理商: MRF7S19120NR1
MRF7S19120NR1
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
Initial Release of Data Sheet
1
Jan. 2009
Updated Fig. 14, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test
Signal, to better represent production test signal, p. 8
Updated Fig. 16, Series Equivalent Source and Load Impedance, large signal Zsource impedance
parameters to better reflect measured values, p. 9
2
Dec. 2009
Updated Charge Device Model ESD from Class IV to III to reflect actual Qual Report results, p. 2
Fig. 14, CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal and Fig. 15, Single-Carrier
W-CDMA Spectrum updated to show the undistorted input test signal, p. 8
Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and
AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product
Documentation, Application Notes, p. 13
Added Electromigration MTTF Calculator availability to Product Software, p. 13
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述: