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參數(shù)資料
| 型號： | MRF7S19170HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 408K |
| 代理商： | MRF7S19170HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
1980
1940
1920
10
18
17
16
15
14
13
12
11
2.5
35
34
33
32
31
1
1.5
2
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
1960
1900
2020
2000
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
SingleCarrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01%
Probability (CCDF)
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
1980
1940
1920
10
18
17
16
15
14
13
12
11
4.2
44
43
42
41
40
3
3.4
3.8
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
1960
1900
2020
2000
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
SingleCarrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
100
15
19
1
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
17
16
10
400
G
ps
,POWER
GAIN
(dB)
18
1750 mA
700 mA
1400 mA
1050 mA
IDQ = 2100 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
40
100
60
50
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
400
1750 mA
1400 mA
1050 mA
IDQ = 700 mA
2100 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19170HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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