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參數(shù)資料
| 型號： | MRF7S21210HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 458K |
| 代理商： | MRF7S21210HR3 |
4
RF Device Data
Freescale Semiconductor
MRF7S21210HR3 MRF7S21210HSR3
Figure 1. Test Circuit Schematic — MRF7S21210HR3
Z11
0.044″ x 0.613″ Microstrip
Z12
0.398″ x 0.102″ Microstrip
Z13
0.071″ x 0.220″ Microstrip
Z14
0.071″ x 0.220″ Microstrip
Z15
0.439″ x 0.066″ Microstrip
Z16
0.764″ x 0.066″ Microstrip
Z17
0.353″ x 0.090″ Microstrip
Z18
0.797″ x 0.090″ Microstrip
Z19, Z20
0.660″ x 0.120″ Microstrip
PCB
Taconic RF35, 0.030”, εr = 3.5
Z1
0.402″ x 0.066″ Microstrip
Z2
0.840″ x 0.076″ Microstrip
Z3
0.059″ x 0.118″ Microstrip
Z4
0.059″ x 0.118″ Microstrip
Z5
0.029″ x 0.076″ Microstrip
Z6
0.194″ x 0.076″ Microstrip
Z7
0.051″ x 0.533″ Microstrip
Z8
0.114″ x 0.533″ Microstrip
Z9
0.139″ x 1.268″ Microstrip
Z10
0.304″ x 1.201″ Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
R1
Z1
Z2
Z3
Z4
C5
Z5
R2
Z17
R3
Z8
Z10
Z11 Z12 Z13
Z14
C6
Z6
Z15
C14
C13
C15
Z19
C10
C11
C19
Z20
+
Z9
Z16
Z7
C12
C16
C17
C20
+
C18
Z18
C9
C8
C7
C3
Table 5. Test Circuit Component Designations and Values — MRF7S21210HR3
Part
Description
Part Number
Manufacturer
C1, C9, C11, C12, C17, C18
10 μF, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C2, C8
100 nF Chip Capacitors
12065C104KAT
AVX
C3, C7, C10, C13, C14, C16
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C5
5.6 pF Chip Capacitor
ATC100B5R6BT500XT
ATC
C6
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C15
0.6 pF Chip Capacitor
ATC100B0R6BT500XT
ATC
C19, C20
470 μF Electrolytic Capacitors
2222 12018471
BC Components
R1, R2
10 KΩ, 1/4 W Chip Resistors
WCR120610KL
Welwyn
R3
10 Ω, 1/4 W Chip Resistor
232272461009
Phycomp
C4 not used in MRF7S21210HR3 part.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S27130HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S27130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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