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參數(shù)資料
| 型號： | MRF7S38075HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 435K |
| 代理商： | MRF7S38075HSR3 |
MRF7S38075HR3 MRF7S38075HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
40
50
10
30
20
60
5th Order
3rd Order
200
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO TONE SPACING (MHz)
10
60
IM3 U
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
40
IM3 L
IM5 U
IM5 L
IM7 L
IM7 U
25
50
55
60
45
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
35
30
10
100
20
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ACPR
(dBc)
ηD
25
15
Gps
VDD = 30 Vdc, IDQ =900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
VDD = 30 Vdc, Pout = 84 W (PEP), IDQ = 900 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
100
8
17
0
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 30 Vdc
IDQ = 900 mA
f = 3500 MHz
TC = 30_C
30
_C
10
1
16
15
14
13
12
35
30
25
20
15
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
40
9
14
0
10
11
IDQ = 900 mA
f = 3500 MHz
120
VDD = 28 V
30 V
0
1
40
35
30
40
25
_C
85
_C
12
13
32 V
5
VDD = 30 Vdc, IDQ = 900 mA
f = 3500 MHz, 802.16d, 64 QAM 3
/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
45
10
11
10
9
200
10
5
25
_C
85
_C
80
100
7th Order
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S38075HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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