參數(shù)資料
型號(hào)： MRF898
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： RF POWER TRANSISTOR NPN SILICON
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 333A-02, 6 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 106K
代理商： MRF898
39
MRF898
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 24 Volt UHF large–signal, common base amplifier applications
in industrial and commercial FM equipment operating in the range of
850–960 MHz.
Motorola Advanced Amplifier Concept Package
Specified 24 Volt, 900 MHz Characteristics
Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min
Double Input/Output Matched for Wideband Performance and Simplified
External Matching
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
10
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
175
1.0
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25
°
C)
V(BR)CEO
30
—
—
Vdc
V(BR)CES
55
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICES
—
—
10
mAdc
(continued)
Order this document
by MRF898/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 850–960 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 1
REV 6
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