參數(shù)資料
型號(hào): MRF8HP21080HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù): 5/14頁
文件大小: 528K
代理商: MRF8HP21080HSR3
MRF8HP21080HR3 MRF8HP21080HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8HP21080H and MRF8HP21080HS parts will be available for 2 years after release of
MRF8HP21080H and MRF8HP21080HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8HP21080H and MRF8HP21080HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2011
Initial Release of Data Sheet
相關(guān)PDF資料
PDF描述
MRF8HP21130HSR3 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8HP21130HSR5 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8P20140WHR3 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8P20140WHR5 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8P20140WHSR5 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8HP21080HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8HP21130HR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8HP21130HR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8HP21130HSR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8HP21130HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray