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參數(shù)資料
| 型號： | MRF8P20140WHSR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 607K |
| 代理商： | MRF8P20140WHSR5 |
MRF8P20140WHR3 MRF8P20140WHSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 500 mA, VGSB =1.2 Vdc,
1880--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
140
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
170 (3)
—
W
IMD Symmetry @ 24 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
133
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
240
—
MHz
Gain Flatness in 145 MHz Bandwidth @ Pout =24 W Avg.
GF
—
0.25
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.013
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C) (3)
P1dB
—
0.003
—
dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
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