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參數(shù)資料
| 型號： | MRF9002NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管陣列N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 403K |
| 代理商： | MRF9002NR2 |
MRF9002NR2
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 978-03
ISSUE C
PLASTIC
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
MIN
2.000
0.025
1.950
6.950
4.372
8.850
6.950
4.372
0.466
0.250 BSC
0.300
0.300
0.180
0.180
0.800 BSC
0
0.200
0.200
0.100
MAX
2.300
0.100
2.100
7.100
5.180
9.150
7.100
5.180
0.720
MILLIMETERS
0.432
0.375
0.279
0.230
0.600
7
aaa
bbb
ccc
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE H IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
BOTTOM VIEW
D1
E2
16
9
8
1
e
S
B
M
bbb
C
D
X 45
h
e
1
E1
8X
E
A2
A
SEATING
PLANE
DATUM
PLANE
GAUGE
PLANE
L
1.000
0.039
L
W
W
A1
ccc C
DETAIL Y
SECT W-W
c
c1
b1
b
éé
S
A
M
aaa
C
A
B
H
C
Y
PFP-16
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