參數(shù)資料
型號(hào): MRFIC0917
廠商: MOTOROLA INC
元件分類(lèi): 衰減器
英文描述: 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 168K
代理商: MRFIC0917
MRFIC0917
2
MOTOROLA RF DEVICE DATA
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
Unit
Supply Voltage
VD1, VD2
VSS
fRF
PRF
2.7 to 5.5
Vdc
Gate Voltage
–5 to –3
Vdc
RF Frequency Range
800 to 1000
MHz
RF Input Power
6 to 13
dBm
ELECTRICAL CHARACTERISTICS
(VD1, VD2 = 3.6 V, VSS = –4 V, Pin = 12 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
Period, TA = 25
°
C unless otherwise noted. Measured in Circuit Configuration Shown in Figure 1.)
Characteristic
Min
Typ
Max
Unit
Frequency Range
880
915
MHz
Output Power
34
34.5
dBm
Power Added Efficiency
43
%
Input VSWR
2:1
VSWR
Harmonic Output
2nd
3rd
–30
–35
dBc
Output Power at low voltage (VD1, VD2 = 3.0 V)
Output Power, Isolation (VD1, VD2 = 0 V)
Noise Power in 100 kHz, 925 to 960 MHz
32.5
33
dBm
–20
–15
dBm
–90
dBm
Stability – Spurious Output (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle,
VD1, VD2 Adjusted for Specified Pout)
–60
dBc
Load Mismatch Stress (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR =
10:1 at any Phase Angle, VD1, VD2 Adjusted for Specified Pout)
No Degradation in Output Power after Returning to
Standard Conditions
3 dB VDD Bandwidth (VD1, VD2 = 0 to 4.5 V)
Negative Supply Current
1
MHz
1
mA
T2
Figure 1. 900 MHz Reference Circuit
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
C8
L1
R3
R4
C9 C10
RF IN
C1, C3, C10 33 pF
C2, C6, C9 33 nF
C4
C5
4.7 pF
10 pF
C8
L1
L2
6.8 pF
5.6 nH
10 Turn MicroSpring,
Coilcraft 1606–10 or
18 mm 50
MICROSTRIP
R1, R3
R4
T1
T2
BOARD MATERIAL FR4
330
1 k
2 mm 30
MICROSTRIP
3.5 mm 30
MICROSTRIP
C3
RF OUT
C4
C2
L2
C1
C6
R1
VSS
VD2
VD1
T1
C5
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