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參數(shù)資料
| 型號： | MS2422 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED, M138, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MS2422 |
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
22
A
PDISS
Power Dissipation
875
W
TJ
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +150
C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.20
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
350 W (typ.) IFF 1030 – 1090 MHz
300 W (min.) DME 1025 – 1150 MHz
290 W (typ.) TACAN 960 – 1215 MHz
960 – 1215 MHz
GOLD METALLIZATION
P
OUT = 300W MINIMUM
G
P = 6.3 dB MINIMUM
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
EMITTER BALLASTED
COMMON BASE
The MS2422 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2422 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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