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參數(shù)資料
| 型號： | MSAFR12N50A |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | MSAFR12N50A |
MSAER12N50A
MSAFR12N50A
500 Volts
12 Amps
400 m
Features
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T
J
≥
25
°
C
Drain-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25
°
C
Tj=
100
°
C
Peak Drain Current, pulse width limited by T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I
S
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
, T
J
≤
150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
BV
DSS
500
Volts
BV
DGR
V
GS
V
GSM
I
D25
I
D100
500
+/-20
+/-30
12
8
Volts
Volts
Volts
Amps
I
DM
I
AR
E
AR
E
AS
dv/dt
48
12
tbd
8
3.5
Amps
Amps
mJ
mJ
V/ns
P
D
T
j
T
stg
I
S
I
SM
θ
JC
300
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
12
48
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Datasheet# MSC0266B
Mechanical Outline
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DRAIN
SOURCE
GATE
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