- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385637 > MSAGX60F60A (MICROSEMI CORP-COLORADO) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MSAGX60F60A |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT |
| 封裝： | COOLPACK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 50K |
| 代理商： | MSAGX60F60A |
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
SYMBOL
BV
CES
CONDITIONS
MIN
600
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
C
= 250
μ
A
V
GE(th)
V
CE
= V
GE
, I
C
= 250
μ
A
V
GE
=
±
20V
DC
, V
CE
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
CE
=0.8
BV
CES
T
J
= 25
°
C
V
GE
= 0 V T
J
= 125
°
C
V
GE
= 15V, I
C
= 30A T
J
= 25
°
C
I
C
= 60A T
J
= 25
°
C
I
C
= 30A T
J
= 125
°
C
V
CE
≥
10 V; I
C
= 30 A
2.5
5.0
±
100
±
200
200
1000
2.9
V
nA
I
GES
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
I
CES
μ
A
V
CE(sat)
2.2
3.5
2.2
20
V
Forward Transconductance (1)
g
fs
15
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25
°
C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125
°
C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHX60F60A
only)
C
ies
C
oes
C
res
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
2500
230
70
pF
t
d(on)
ri
t
d(off)
fi
E
off
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 30 A, R
G
= 4.7
,
L= 100
μ
H note 2, 3
25
30
175
125
1.3
175
ns
ns
ns
ns
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
Q
g
Q
ge
Q
gc
V
F
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 30 A, R
G
= 4.7
,
L= 100
μ
H note 2, 3
25
35
1
250
260
4
125
23
50
ns
ns
mJ
ns
ns
mJ
nC
V
GE
= 15 V, V
CE
= 300V, I
C
= 30A
150
35
75
1.5
1.3
I
E
= 15 A T
J
= 25
°
C
I
E
= 15 A T
J
= 150
°
C
I
E
= 30 A T
J
= 25
°
C
I
E
= 50 A T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
1.7
1.9
V
V
V
V
ns
ns
nC
nC
A
A
Antiparallel diode reverse recovery time
(MSAHX60F60A only)
Antiparallel diode reverse recovery charge
(MSAHX60F60A only)
Antiparallel diode peak recovery current
(MSAHX60F60A only)
t
rr
140
160
320
3
4.2
100
Q
rr
I
RM
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
MSAGX60F60A
MSAHX60F60A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSAHX75L60C | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| MSARS200S10L | HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
| MSARS200S10LR | HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
| MSARS200S20LP | HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
| MSARS200S20LRP | HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSAGX75F60A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 600V 75A 3PIN COOLPACK1 - Bulk |
| MSAGX75L60A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 600V 75A 3PIN COOLPACK1 - Bulk |
| MSAGZ52F120A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 1.2KV 52A 3PIN COOLPACK1 - Bulk |
| MSAHR36F120A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 36A 3PIN COOLPACK1 - Bulk |
| MSAHR55F60A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 55A 3PIN COOLPACK1 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。