- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385637 > MSAHX60F60A (MICROSEMI CORP-COLORADO) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MSAHX60F60A |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MSAHX60F60A |
MSAGX60F60A
MSAHX60F60A
600 Volts
60 Amps
2.9 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)60F60B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHX60F60A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
≥
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj=
90
°
C
Peak Collector Current, pulse width limited by T
jmax
,
Safe Operating Area (RBSOA)
@ V
GE
= 15V, L= 100
μ
H (clamped inductive
load), R
G
= 4.7
, Tj= 125
°
C, V
CE
= 0.8 x V
CES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHX60F60A only)
Pulse Source Current (Body Diode, MSAHX60F60A only)
Thermal Resistance, Junction to Case
BV
CES
600
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
600
+/-20
+/-30
60
32
Volts
Volts
Volts
Amps
I
CM
I
max
120
64
Amps
Amps
P
D
T
j
T
stg
I
S
I
SM
θ
JC
300
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
32
100
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0298A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER
(MS…A)
GATE (MS…B)
.A)
EMITTER (MS…B)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSAGX60F60A | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| MSAHX75L60C | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| MSARS200S10L | HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
| MSARS200S10LR | HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
| MSARS200S20LP | HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSAHX60L60A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 60A 3PIN COOLPACK1 - Bulk |
| MSAHX75L60C | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 600V 75A 3PIN COOLPACK2 - Bulk |
| MSAHZ52F120A | 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 1.2KV 52A 3PIN COOLPACK1 - Bulk |
| MS-AJ1 | 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:BASIC HORIZON SENSOR MOUNT STAND 制造商:Panasonic Industrial Company 功能描述:BASIC HORIZON SENSOR MOUNT STAND |
| MS-AJ1-A | 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:LATERAL HORIZON SENSOR MNT STAND 制造商:Panasonic Industrial Company 功能描述:LATERAL HORIZON SENSOR MNT STAND |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。