參數(shù)資料
型號： MSAHX75L60C
廠商： MICROSEMI CORP-COLORADO
元件分類： 功率晶體管
英文描述： N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 75 A, 600 V, N-CHANNEL IGBT
文件頁數(shù)： 2/2頁
文件大小： 49K
代理商： MSAHX75L60C
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
SYMBOL
BV
CES
CONDITIONS
MIN
600
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
C
= 250
μ
A
V
GE(th)
V
CE
= V
GE
, I
C
= 250
μ
A
V
GE
=
±
20V
DC
, V
CE
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
CE
=0.8
BV
CES
T
J
= 25
°
C
V
GE
= 0 V T
J
= 125
°
C
V
GE
= 15V, I
C
= 60A T
J
= 25
°
C
I
C
= 60A T
J
= 125
°
C
V
CE
≥
10 V; I
C
= 60 A
2.5
5.0
±
100
±
200
200
1000
1.8
V
nA
I
GES
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
I
CES
μ
A
V
CE(sat)
g
fs
1.8
40
V
Forward Transconductance (1)
30
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25
°
C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125
°
C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage
C
ies
C
oes
C
res
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
4000
340
100
pF
t
d(on)
ri
t
d(off)
fi
E
off
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 60 A, R
G
= 2.7
,
L= 100
μ
H note 2, 3
50
210
600
500
16
800
700
ns
ns
ns
ns
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
Q
g
Q
ge
Q
gc
V
F
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 60 A, R
G
= 2.7
,
L= 100
μ
H note 2, 3
50
240
3
1000
1000
26
200
35
80
1.55
1.75
2
1.5
35
120
140
500
750
7
9
ns
ns
mJ
ns
ns
mJ
nC
V
GE
= 15 V, V
CE
= 300V, I
C
= 50A
250
50
100
I
E
= 30 A T
J
= 25
°
C
I
E
= 60 A T
J
= 25
°
C
I
E
= 100 A T
J
= 25
°
C
I
E
= 60 A T
J
= 150
°
C
I
E
= 1 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 200 A/us, T
J
= 100
°
C
I
E
= 40 A, dI
E
/dt= 200 A/us, T
J
= 100
°
C
I
E
= 10 A, dI
E
/dt= 200 A/us, T
J
= 100
°
C
I
E
= 40 A, dI
E
/dt= 100 A/us, T
J
= 100
°
C
I
E
= 10 A, dI
E
/dt= 200 A/us, T
J
= 100
°
C
I
E
= 40 A, dI
E
/dt= 200 A/us, T
J
= 100
°
C
V
V
V
V
ns
ns
ns
nC
nC
A
A
Antiparallel diode reverse recovery time
t
rr
150
Antiparallel diode reverse recovery charge
Q
rr
Antiparallel diode peak recovery current
I
RM
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
MSAHX75L60C
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