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參數(shù)資料
| 型號(hào)： | MSC23S2640E-8BS8 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): |
| 中文描述： | 2097152字× 64位同步動(dòng)態(tài)RAM模塊（1BANK）： |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | MSC23S2640E-8BS8 |
MSC23S2640E-8BS8 (98.08.19)
Page 4/11
SERIAL PRESENCE DETECT
Byte
No.
SPD
Hex Value
80
Remark
Notes
0
Defines the number of bytes written into
SPD memory
Total number of bytes of SPD memory
Fundamental memory type
Number of rows
Number of columns
Number of module banks
Data width of this assembly
... Data width continuation
Voltage interface level
Cycle time (CL=3)
Access time from CLK (CL=3)
DIMM configuration type
Refresh rate / type
Primary SDRAM width
Error checking SDRAM width
Minimum CLK delay
Burst lengths supported
Number of banks on each SDRAM
/CAS latency
/CS latency
/WE latency
SDRAM module attributes
SDRAM device attributes : General
Cycle time (CL=2)
Access time from CLK (CL=2)
Cycle time (CL=1)
Access time from CLK (CL=1)
Minimum ROW pulse width
/RAS to /RAS bank delay
/RAS to /CAS delay
Minimum /RAS precharge time
Density of each bank on module
Command and address signal input setup time
2ns
Command and address signal input hold time
Data signal input setup time
Data signal input hold time
128 byte
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
08
04
0B
09
01
40
00
01
80
60
00
80
08
00
01
8F
02
06
01
01
00
06
C0
A0
00
00
14
14
14
30
04
20
10
20
10
00-00
12
2E
256 byte
SDRAM
11 rows
9 columns
1 bank
64 bits
0
LVTTL
CL=3 t
CC
=8ns
CL=3 t
AC3
=6ns
Non Parity
Normal / Self
x8
t
CCD
: 1 CLK
1, 2, 4, 8, F
2 banks
2, 3
0
0
CL=2 t
CC2
=12ns
CL=2 t
AC2
=10ns
Not support
Not support
t
RP
=20ns
t
RRD
=20ns
t
RCD
=20ns
t
RAS
=48ns
16MB
1ns
2ns
1ns
R.F.U
1.2
36-61
62
63
64-71
72
SPD data revision code
Checksum for byte 0-62
Manufacturer’s JEDEC ID code
Manufacturing location
Manufacturer’s part number
41,45,20,20,20,20,20,20
01 / 06
43,32,33,53,32,36,34,30,45,
2D,38,42,53,38,20,20,20,20
20, 20
00-00
64
A5
FF-FF
73-90
C23S2640E-8BS8
91, 92
93-125
126
127
128-255
Revision code
R.F.U
Intel specification frequency
Intel specification /CAS latency
Unused storage locations
100MHz
CL=3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSC23S2640E | 2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): |
| MSC23S2720E-8BS9 | 2,097,152 Word x72 Bit Synchronous Dynamic RAM Module (2BANK)(2M字×72位同步動(dòng)態(tài)RAM模塊) |
| MSC23S4641E-8BS16 | 4194304 Word x 64 Bit Synchronous Dynamic RAM Module (2BANK)(4M字×64位同步動(dòng)態(tài)RAM模塊) |
| MSC23S4721E-8BS18 | 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字×72位同步動(dòng)態(tài)RAM模塊) |
| MSC23V26457TA | 2,097,152-Word x 64-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSC23S2720E | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK) |
| MSC23S2720E-8BS9 | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK) |
| MSC23S4641E | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): |
| MSC23S4641E-8BS16 | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): |
| MSC23S4721E | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): |
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