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參數(shù)資料
| 型號： | MSC3130T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Amplifier Transistor Surface Mount |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 105K |
| 代理商： | MSC3130T1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
VCEO
VEBO
IC
15
Vdc
Collector–Emitter Voltage
10
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
—
1.0
μ
Adc
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
VCEO
10
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc, IC = 0)
DC Current Gain(1)
(VCE = 4.0 Vdc, IC = 5.0 mAdc)
VEBO
3.0
—
Vdc
hFE
75
400
—
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 4.0 mAdc)
VCE(sat)
—
0.5
Vdc
Current–Gain — Bandwidth Product
(VCB = 4.0 Vdc, IE = –5.0 mAdc)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
fT
1.4
2.5
GHz
DEVICE MARKING
Marking Symbol
1
X
S
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSC3130T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
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